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2SD1410A

Part Number	2SD1410A
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Apr 3, 2005
Detailed Description	2SD1410A TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD1410A High Voltage Switching Applications ...
Datasheet	2SD1410A PDF File

Overview

2SD1410A TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD1410A High Voltage Switching Applications Industrial Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 2 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 250 V Emitter-base voltage VEBO 5 V Collector current IC 6 A Base current IB 1 A Collector power dissipation Ta = 25°C Tc = 25°C PC 2.
0 W 25 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC ― Note1: Using continuously under heavy loads (e.
g.
the application of high JEITA ― temperat...

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