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2SD1415A

Part Number	2SD1415A
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Apr 3, 2005
Detailed Description	2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD1415A High-Power Switching Applications Ha...
Datasheet	2SD1415A PDF File

Overview

2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.
5 V (max) (IC = 3 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C VCBO VCEO VEBO IC ICP IB PC 120 V 100 V 6V 7 A 10 0.
7 A 2.
0 W 25 JEDEC JEITA ― ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 1...

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