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IRF630S

Part Number	IRF630S
Manufacturer	NXP
Description	N-Channel MOSFET
Published	Apr 16, 2005
Detailed Description	Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF630, IRF630S FEATURES • ’Trench’ tec...
Datasheet	IRF630S PDF File

Overview

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF630, IRF630S FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 9 A g RDS(ON) ≤ 400 mΩ s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.
V.
and computer monitor power supplies, d.
c.
to d.
c.
converters, motor control circuits and general purpose switching applications.
The IRF630 is supplied in the SOT78 (TO220AB) conventional leaded package The IRF630S is supplied in the SOT404 (D2PAK) surface mou...

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