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IRF640A

Part Number	IRF640A
Manufacturer	Fairchild Semiconductor
Description	Advanced Power MOSFET
Published	Apr 16, 2005
Detailed Description	Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
Datasheet	IRF640A PDF File

Overview

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.
) @ VDS = 200V Lower RDS(ON) : 0.
144 Ω(Typ.
) 1 2 3 IRF640A BVDSS = 200 V RDS(on) = 0.
18 Ω ID = 18 A TO-220 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC...

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