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IRF7314

Part Number	IRF7314
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Apr 16, 2005
Detailed Description	PD - 9.1436B PRELIMINARY l l l l l IRF7314 HEXFET® Power MOSFET 8 7 Generation V Technology Ultra Low On-Resistance D...
Datasheet	IRF7314 PDF File

Overview

PD - 9.
1436B PRELIMINARY l l l l l IRF7314 HEXFET® Power MOSFET 8 7 Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 1 D1 D1 D2 D2 2 VDSS = -20V RDS(on) = 0.
058Ω 3 6 4 5 T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified throug...

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