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IRF820A

International Rectifier
Part Number IRF820A
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD- 93773A SMPS MOSFET IRF820A HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptable Po...
Datasheet PDF File IRF820A PDF File

IRF820A
IRF820A

Overview
PD- 93773A SMPS MOSFET IRF820A HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching l VDSS 500V RDS(on) max 3.
0Ω ID 2.
5A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective COSS specified (See AN 1001) l TO-220AB GDS Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max.
2.
5 1.
6 10 50 0.
4 ± 30 3.
4 -55 to + 150 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Units A W W/°C V V/ns °C Typical SMPS Topologies: l l Two transistor Forward Half Bridge and Full Bridge Notes  through … are on page 8 www.
irf.
com 1 5/8/00 IRF820A Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
500 ––– ––– 2.
0 ––– ––– ––– ––– Typ.
––– 0.
60 ––– ––– ––– ––– ––– ––– Max.
Units Conditions ––– V VGS = 0V, I D = 250µA ––– V/°C Reference to 25°C, ID = 1mA 3.
0 Ω VGS = 10V, ID = 1.
5A „ 4.
5 V VDS = VGS, ID = 250µA 25 VDS = 500V, VGS = 0V µA 250 VDS = 400V, VGS = 0V, TJ = 125°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-O...


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