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Q62702-A1200

Siemens Semiconductor Group
Part Number Q62702-A1200
Manufacturer Siemens Semiconductor Group
Description Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications)
Published Apr 16, 2005
Detailed Description BAT 68-07W Silicon Schottky Diodes • For mixer applications in the VHF / UHF range • For high-speed switching applicatio...
Datasheet PDF File Q62702-A1200 PDF File

Q62702-A1200
Q62702-A1200

Overview
BAT 68-07W Silicon Schottky Diodes • For mixer applications in the VHF / UHF range • For high-speed switching applications 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT 68-07W Marking Ordering Code 87 Q62702-A1200 Pin Configuration Package 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S = 89 °C Junction temperature Operating temperature range Storage temperature Maximum Ratings Junction - ambient 1) Symbol Value 8 130 150 150 -65.
.
.
+150 - 65 .
.
.
+150 Unit V mA mW °C °C °C VR IF Ptot Tj Top Tstg RthJA RthJS ≤ 570 ≤ 410 K/W Junction - soldering point 1) Package mounted on alumina 15mm x 17.
6mm x 0.
7mm Semiconductor Group Semiconductor Group 11 Sep-09-1998 1998-11-01 BAT 68-07W Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter DC characteristics Breakdown voltage Symbol min.
Values typ.
max.
0.
1 1.
2 V µA nA mV 340 318 390 340 500 Unit V(BR) IR IR VF 8 - I (BR) = 10 µA Reverse current VR = 1 V Reverse current VR = 1 V, TA = 60 °C Forward voltage I F = 1 mA I F = 10 mA AC characteristics Diode capacitance CT rf - - 1 10 pF Ω VR = 1 V, f = 1 MHz Differential forward resistance I F = 5 mA, f = 10 kHz Semiconductor Group Semiconductor Group 22 Sep-09-1998 1998-11-01 BAT 68-07W Forward current IF = f (TA*;TS) * Package mounted on alumina 140 mA 120 110 100 TS TA IF 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 °C 150 TA,TS Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 10 2 K/W IFmax / IFDC - 10 2 10 1 10 1 0.
5 0.
2 0.
1 0.
05 0.
02 0.
01 0.
005 D=0 D=0 0.
005 0.
01 0.
02 0.
05 0.
1 0.
2 0.
5 RthJS 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 33 Sep-09-1998 1998-11-01 BAT 68-07W Forward current IF =...


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