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Q62702-A1211

Siemens Semiconductor Group
Part Number Q62702-A1211
Manufacturer Siemens Semiconductor Group
Description Silicon PIN Diode (PIN diode for high speed switching of RF signals/ Low forward resistance/ small capacitance small inductance)
Published Apr 16, 2005
Detailed Description BAR 63-02W Silicon PIN Diode • PIN diode for high speed switching of RF signals • Low forward resistance, small capacita...
Datasheet PDF File Q62702-A1211 PDF File

Q62702-A1211
Q62702-A1211

Overview
BAR 63-02W Silicon PIN Diode • PIN diode for high speed switching of RF signals • Low forward resistance, small capacitance small inductance • Very low capacitance • For frequencies up to 3 GHz 2 1 VES05991 Type BAR 63-02W Marking Ordering Code G Q62702-A1211 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S = 115 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) Symbol Value 50 100 250 150 -55 .
.
.
+150 -55 .
.
.
+150 Unit V mA mW °C °C VR IF Ptot Tj Top Tstg RthJA RthJS ≤ 220 ≤ 140 K/W Junction - soldering point 1) Package mounted on alumina 15mm x 16.
7mm x 0.
7mm Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAR 63-02W Electrical Characteristics at TA = 25 =C, unless otherwise specified.
Parameter Symbol Values min.
DC characteristics Breakdown voltage typ.
0.
95 max.
10 1.
2 Unit V(BR) IR VF 50 - V µA V I (BR) = 5 µA Reverse current VR = 35 V Forward voltage I F = 100 mA AC characteristics Diode capacitance CT 0.
3 0.
21 0.
09 0.
3 - pF VR = 0 V, f = 100 MHz VR = 5 V, f = 1 MHz Case capacitance CC rf f = 1 MHz Forward resistance Ω τrr 1.
2 1 75 0.
6 2 µs nH I F = 5 mA, f = 100 MHz I F = 10 mA, f = 100 MHz Charge carrier life time I F = 10 mA, I R = 6 mA, I R = 3 mA Series inductance Ls Semiconductor Group Semiconductor Group 22 Sep-07-1998 1998-11-01 BAR 63-02W Forward current IF = f (TA*;TS) *): mounted on alumina 15mm x 16.
7mm x 0.
7mm 120 mA 5 100 90 80 TS IF 70 60 50 40 30 20 10 0 0 20 40 60 80 TA 100 120 °C 150 TA,TS Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 10 1 K/W IFmax / IFDC 10 2 - 10 1 0.
5 0.
2 0.
1 0.
05 0.
02 0.
01 0.
005 D=0 D=0 0.
005 0.
01 0.
02 0.
05 0.
1 0.
2 0.
5 RthJS 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Gro...


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