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Q62702-A1216

Siemens Semiconductor Group
Part Number Q62702-A1216
Manufacturer Siemens Semiconductor Group
Description Silicon RF Switching Diode Preliminary data (Low loss/ low capacitance PIN-diode Band switch for TV-tuners)
Published Apr 16, 2005
Detailed Description BAR 65-02W Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-diode • Band switch for TV-tuners...
Datasheet PDF File Q62702-A1216 PDF File

Q62702-A1216
Q62702-A1216


Overview
BAR 65-02W Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-diode • Band switch for TV-tuners • Series diode for mobile communication transmit-receiver switch 2 1 VES05991 Type BAR 65-02W Marking N Ordering Code Q62702-A1216 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 30 100 - 55 .
.
.
+125 - 55 .
.
.
+150 Unit V mA °C VR IF T op T stg Semiconductor Group Semiconductor Group 11 Jun-18-1998 1998-11-01 BAR 65-02W Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter DC characteristics Reverse current Symbol min.
Values typ.
0.
93 max.
20 1 nA V Unit IR VF - VR = 20 V Forward voltage I F = 100 mA AC characteristics Diode capacitance CT 0.
6 0.
57 0.
65 0.
56 0.
6 0.
9 0.
8 pF VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance rf 0.
95 0.
9 - Ω I F = 5 mA, f = 100 MHz I F = 10 mA, f = 100 MHz Series inductance Ls - nH Semiconductor Group Semiconductor Group 22 Jun-18-1998 1998-11-01 BAR 65-02W Forward current IF = f (V F) T A = 25°C 10 3 mA Forward resistance rf = f(IF) f = 100MHz 3.
0 Ohm 10 2 2.
4 IF RF 2.
2 2.
0 1.
8 10 1 1.
6 1.
4 1.
2 1.
0 10 0 0.
8 0.
6 0.
4 0.
2 10 -1 400 500 600 700 800 mV 1000 0.
0 -1 10 10 0 mA VF IF Diode capacitance CT = f (V R) f = 1MHz Diode capacitance CT = f (VR) f = 100MHz 1.
0 1.
0 pF pF CT 0.
8 CT 0.
8 0.
7 0.
7 0.
6 0.
6 0.
5 0.
5 0.
4 0.
4 0.
3 0.
3 0.
2 0 1 2 3 4 5 6 7 8 V 10 0.
2 0 1 2 3 4 5 6 7 8 V 10 VR VR Semiconductor Group Semiconductor Group 33 Jun-18-1998 1998-11-01 ...


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