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Q62702-A1270

Part Number	Q62702-A1270
Manufacturer	Siemens Semiconductor Group
Description	Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)
Published	Apr 16, 2005
Detailed Description	BAR 81W Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolatio...
Datasheet	Q62702-A1270 PDF File

Overview

BAR 81W Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss 3 4 2 1 VPS05605 Type BAR 81W Marking Ordering Code BBs Q62702-A1270 Pin Configuration Package 1 = A1 2 = C2 3 = A2 4 = C1 SOT-343 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S = 138 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) Symbol Value 30 100 100 150 -55 .
.
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+125 -55 .
.
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+150 Unit V mA mW °C °C VR IF Ptot Tj Top Tstg RthJA RthJS ≤ 200 ≤ 120 K/W Junction - soldering point 1) Package mounted on alumina 15mm x 16.
7m...

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