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Q62702-B580

Siemens Semiconductor Group
Part Number Q62702-B580
Manufacturer Siemens Semiconductor Group
Description Silicon Variable Capacitance Diode (For UHF and TV/TR tuners Large capacitance ratio/ low series resistance)
Published Apr 16, 2005
Detailed Description BB 535 Silicon Variable Capacitance Diode • For UHF and TV/TR tuners • Large capacitance ratio, low series resistance T...
Datasheet PDF File Q62702-B580 PDF File

Q62702-B580
Q62702-B580


Overview
BB 535 Silicon Variable Capacitance Diode • For UHF and TV/TR tuners • Large capacitance ratio, low series resistance Type BB 535 Marking Ordering Code white S Q62702-B580 Pin Configuration 1=C 2=A Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R ≥ 5kΩ) Forward current Operating temperature range Storage temperature Thermal Resistance Junction - ambient Symbol Values 30 35 20 - 55 .
.
.
+ 125 - 55 .
.
.
+ 150 mA °C Unit V VR VRM IF Top Tstg RthJA ≤ 450 K/W Semiconductor Group 1 Jan-08-1997 BB 535 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min.
DC characteristics Reverse current Values typ.
max.
Unit IR 10 200 nA VR = 30 V, TA = 25 °C VR = 30 V, TA = 85 °C AC characteristics Diode capacitance CT 17.
5 14.
01 2.
05 1.
9 18.
7 15 2.
24 2.
1 6.
7 8.
9 0.
55 2 20 16.
1 2.
4 2.
3 pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/CT25 6 7.
5 9.
8 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio CT1/CT28 8.
2 ∆CT/CT 2.
5 Ω 0.
65 nH % VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching VR = 1 .
.
.
28 V, f = 1 MHz Series resistance rs Ls VR = 3 V, f = 470 MHz Series inductance Semiconductor Group 2 Jan-08-1997 BB 535 Diode capacitance CT = f (VR) f = 1MHz Temperature coefficient of the diode capacitance TCc = f (VR) f = 1MHz 10 -1 1/°C 20 pF CT 16 14 12 10 8 6 4 2 0 0 5 10 15 20 V 30 TCc 10 -2 10 -3 10 -4 10 -5 0 10 10 1 V VR VR Normalized diode capacitance Reverse current IR = f (TA) VR = 28V C(TA) / C(25°C)= f (TA) f = 1MHz, VR= Parameter 1.
06 10 3 pA CTA/C25 1V IR 10 2 1.
02 2V 25V 1.
00 10 1 0.
98 0.
96 -30 -10 10 30 50 70 °C TA 110 10 0 -10 10 30 50 70 °C TA 100 Semiconductor Group 3 Jan-08-1997 BB 535 Reverse current IR = f (VR) TA = Parameter 10 3 pA 85°C IR 10 2 25°C 10 1 10 0 10 -1 0 10 10 1 V VR Semiconductor Group 4 Jan-08-1997 ...


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