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Q62702-B583

Siemens Semiconductor Group
Part Number Q62702-B583
Manufacturer Siemens Semiconductor Group
Description Silicon Tuning Diode (For tuning UHF and VHF TV Tuners Large capacitance ratio/ low series resistance)
Published Apr 16, 2005
Detailed Description BB 545 Silicon Tuning Diode Preliminary data • For tuning UHF and VHF TV Tuners • Large capacitance ratio, low series re...
Datasheet PDF File Q62702-B583 PDF File

Q62702-B583
Q62702-B583

Overview
BB 545 Silicon Tuning Diode Preliminary data • For tuning UHF and VHF TV Tuners • Large capacitance ratio, low series resistance Type BB 545 Marking Ordering Code white U Q62702-B583 Pin Configuration 1=K 2=A Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 30 20 - 55 .
.
.
+ 150 - 55 .
.
.
+ 150 Unit V mA °C VR IF Top Tstg Thermal Resistance Junction ambient 1) RthJA ≤ 450 K/W 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.
5mm / 0.
5cm2 Cu Semiconductor Group 1 Jan-31-1997 BB 545 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min.
DC characteristics Reverse current Values typ.
max.
Unit IR 10 200 nA VR = 30 V, TA = 25 °C VR = 30 V, TA = 85 °C AC characteristics Diode capacitance CT 18.
5 13.
2 1.
85 1.
8 20 14.
8 2.
07 2 7.
2 10 0.
6 2 21.
5 16.
4 2.
28 2.
2 pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/CT25 6.
3 8.
1 11 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio CT1/CT28 9 ∆CT/CT 2.
5 Ω nH % VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching 1) VR = 1 .
.
.
28 V, f = 1 MHz Series resistance rs Ls VR = 3 V, f = 470 MHz Series inductance Semiconductor Group 2 Jan-31-1997 BB 545 Diode capacitance CT = f (VR) f = 1MHz Temperature coefficient of the diode capacitance TCc = f (VR) f = 1MHz 10 -1 1/°C 22 pF CT 18 16 14 12 10 8 6 4 2 0 0 5 10 15 20 V 30 TCc 10 -2 10 -3 10 -4 10 -5 0 10 10 1 V VR VR Reverse current IR = f (VR) TA = Parameter 10 4 pA 10 3 85°C Reverse current IR = f (TA) VR = 28V 10 4 pA IR IR 10 3 10 2 25°C 10 1 10 2 10 0 10 -1 0 10 10 1 V 10 1 -30 -10 10 30 50 70 VR °C TA 100 Semiconductor Group 3 Jan-31-1997 ...


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