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Q62702-B599

Siemens Semiconductor Group
Part Number Q62702-B599
Manufacturer Siemens Semiconductor Group
Description Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)
Published Apr 16, 2005
Detailed Description BBY 52 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VC...
Datasheet PDF File Q62702-B599 PDF File

Q62702-B599
Q62702-B599

Overview
BBY 52 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type BBY 52 Marking Ordering Code S5s Q62702-B599 Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-23 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 7 20 - 55 .
.
.
+ 150 - 55 .
.
.
+ 150 Unit V mA °C VR IF Top Tstg Semiconductor Group 1 Jul-04-1996 BBY 52 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min.
DC characteristics Reverse current Values typ.
max.
Unit IR 10 200 nA VR = 6 V, TA = 25 °C VR = 6 V, TA = 65 °C AC characteristics Diode capacitance CT 1.
4 0.
85 1.
85 1.
5 1.
35 1.
15 1.
6 0.
9 0.
12 2 2.
2 1.
45 pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/CT4 1.
1 2.
1 Ω 1.
8 pF nH - VR = 1 V, VR = 4 V, f = 1 MHz Series resistance rs CC Ls VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group 2 Jul-04-1996 BBY 52 Diode capacitance CT = f (VR) f = 1MHz 2.
4 pF CD 2.
0 1.
8 1.
6 1.
4 1.
2 1.
0 0.
8 0.
6 0.
4 1.
0 1.
5 2.
0 2.
5 3.
0 V 4.
0 VR Package Semiconductor Group 3 Jul-04-1996 ...


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