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Q62702-B592

Siemens Semiconductor Group
Part Number Q62702-B592
Manufacturer Siemens Semiconductor Group
Description Silicon Variable Capacitance Diode (Frequency range up to 2 GHz special design for use in TV-sat indoor units)
Published Apr 16, 2005
Detailed Description BB 831 Silicon Variable Capacitance Diode Preliminary data • Frequency range up to 2 GHz special design for use in TV-sa...
Datasheet PDF File Q62702-B592 PDF File

Q62702-B592
Q62702-B592

Overview
BB 831 Silicon Variable Capacitance Diode Preliminary data • Frequency range up to 2 GHz special design for use in TV-sat indoor units Type BB 831 Marking white T Ordering Code Q62702-B592 Pin Configuration 1=C 2=A Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R ≥ 5kΩ ) Forward current Operating temperature range Storage temperature Symbol VR VRM IF Top Tstg Value 30 35 20 -55 .
.
.
+125 -55 .
.
.
+150 mA °C Unit V Semiconductor Group 1 Aug-03-1998 BB 831 Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter DC characteristics Reverse current VR = 30 V Reverse current VR = 30 V, TA = 85 °C IR 500 IR 20 nA Symbol min.
Values typ.
max.
Unit AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching VR = 1 V, VR = 28 V, f = 1 MHz Series resistance VR = 1 V, f = 100 MHz Series inductance Ls 1.
8 nH rs 1 Ω CT1 /CT28 ∆CT /CT CT 7.
8 0.
85 7.
8 8.
8 1.
02 8.
6 9.
8 1.
2 9.
5 3 % pF 1) In-line matching.
For details please refer to Application Note 047 Semiconductor Group 2 Aug-03-1998 BB 831 Diode capacitance CT = f (VR ) f = 1MHz Semiconductor Group 3 Aug-03-1998 ...


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