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ULBM10

Advanced Semiconductor
Part Number ULBM10
Manufacturer Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Published Apr 17, 2005
Detailed Description ULBM10 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM10 is Designed for PACKAGE STYLE .280 4L STUD FEATURES...
Datasheet PDF File ULBM10 PDF File

ULBM10
ULBM10

Overview
ULBM10 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM10 is Designed for PACKAGE STYLE .
280 4L STUD FEATURES: • • • Omnigold™ Metalization System B A 45° D C J MAXIMUM RATINGS E I IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC O 2.
5 A 36 V 16 V 36 V 4.
0 V 58 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 7.
0 OC/W O O O O DIM A B C D E F G H I J K F G H K MINIMUM inches / mm #8-32 UNC MAXIMUM inches / mm 1.
010 / 25.
65 .
220 / 5.
59 .
270 / 6.
86 .
003 / 0.
08 .
117 / 2.
97 .
572 / 14.
53 .
130 / 3.
30 .
245 / 6.
22 .
640 / 16.
26 .
175 / 4.
45 .
275 / 6.
99 1.
055 / 26.
80 .
230 /5.
84 .
285 / 7.
24 .
007 / 0.
18 .
137 / 3.
48 .
255 / 6.
48 .
217 / 5.
51 .
285 / 7.
24 ORDER CODE: ASI10682 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICEO ICES hFE Cob PG ηC IC = 20 mA IC = 25 mA IE = 10 mA VCB = 15 V TC = 25 C O NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 16 36 4.
0 2.
0 3.
0 UNITS V V V mA mA --pF dB VCE = 10 V VCE = 5.
0 V VCB = 12.
5 V VCC = 12.
5 V POUT = 10 W IC = 1.
0 A f = 1.
0 MHz f = 470 MHz 7.
0 60 10 --25 % A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
A 1/1 ...


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