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ULBM45

Advanced Semiconductor
Part Number ULBM45
Manufacturer Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Published Apr 17, 2005
Detailed Description ULBM45 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM45 is Designed for PACKAGE STYLE .500 6L FLG FEATURES:...
Datasheet PDF File ULBM45 PDF File

ULBM45
ULBM45

Overview
ULBM45 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM45 is Designed for PACKAGE STYLE .
500 6L FLG FEATURES: • • • Omnigold™ Metalization System D C A 2x ØN FULL R B E .
725/18,42 F K M L MAXIMUM inches / mm MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC 10.
0 A 36 V 16 V 36 V 4.
0 V 175 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 1.
0 OC/W DIM A B C D E F G H I J K L M N G H MINIMUM inches / mm J I .
150 / 3.
43 .
045 / 1.
14 .
210 / 5.
33 .
835 / 21.
21 .
200 / 5.
08 .
490 / 12.
45 .
003 / 0.
08 .
125 / 3.
18 .
725 / 18.
42 .
970 / 24.
64 .
090 / 2.
29 .
150 / 3.
81 .
160 / 4.
06 .
220 / 5.
59 .
865 / 21.
97 .
210 / 5.
33 .
510 / 12.
95 .
007 / 0.
18 .
980 / 24.
89 .
105 / 2.
67 .
170 / 4.
32 .
285 / 7.
24 .
120 / 3.
05 .
135 / 3.
43 ORDER CODE: ASI10685 CHARACTERISTICS SYMBOL BVCEO BVCES BVCBO BVEBO ICBO ICES hFE Cob PG ηC IC = 50 mA IC = 20 mA TC = 25 C O NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 16 36 36 4.
0 5.
0 5.
0 UNITS V V V mA mA --pF dB IC = 5.
0 mA IE = 5.
0 mA VCB = 15 V VCE = 22 V VCE = 12.
5 V VCB = 12.
5 V VCE = 12.
5 V POUT = 45 W IC = 1.
0 A f = 1.
0 MHz f = 470 MHz 20 200 150 5.
0 60 % A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
A 1/1 ...


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