DatasheetsPDF.com

ULBM35

Advanced Semiconductor
Part Number ULBM35
Manufacturer Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Published Apr 17, 2005
Detailed Description ULBM35 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM35 is Designed for PACKAGE STYLE .500 6L FLG C A 2x ØN...
Datasheet PDF File ULBM35 PDF File

ULBM35
ULBM35

Overview
ULBM35 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM35 is Designed for PACKAGE STYLE .
500 6L FLG C A 2x ØN FEATURES: • • • Omnigold™ Metalization System FULL R D B G .
725/18,42 F E K M L MAXIMUM RATINGS DIM H MINIMUM inches / mm J I MAXIMUM inches / mm IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O 8.
0 A 36 V 16 V 4.
0 V 117 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 1.
5 OC/W O O O A B C D E F G H I J K L M N .
150 / 3.
43 .
045 / 1.
14 .
210 / 5.
33 .
835 / 21.
21 .
200 / 5.
08 .
490 / 12.
45 .
003 / 0.
08 .
125 / 3.
18 .
725 / 18.
42 .
970 / 24.
64 .
090 / 2.
29 .
150 / 3.
81 .
160 / 4.
06 .
220 / 5.
59 .
865 / 21.
97 .
210 / 5.
33 .
510 / 12.
95 .
007 / 0.
18 .
980 / 24.
89 .
105 / 2.
67 .
170 / 4.
32 .
285 / 7.
24 .
120 / 3.
05 .
135 / 3.
43 ORDER CODE: ASI10684 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICES hFE Cob PG ηC IC = 50 mA IC = 15 mA TC = 25 C O NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 16 36 4.
0 5 UNITS V V V mA --pF dB IE = 5.
0 mA VCE = 12.
5 V VCE = 5.
0 V VCB = 12.
5 V VCC = 12.
5 V POUT = 35 W IC = 1.
0 A f = 1.
0 MHz f = 470 MHz 20 --110 6.
0 60 % A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
A 1/1 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)