DatasheetsPDF.com

ZTX718

Zetex Semiconductors
Part Number ZTX718
Manufacturer Zetex Semiconductors
Description PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Published Apr 17, 2005
Detailed Description PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 4– MAY 1998 FEATURES * 6A Peak pulse current * Excellent hFE ...
Datasheet PDF File ZTX718 PDF File

ZTX718
ZTX718

Overview
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 4– MAY 1998 FEATURES * 6A Peak pulse current * Excellent hFE characteristics up to 6A (pulsed) * low saturation voltage * IC Cont 2.
5A APPLICATIONS * Power MOSFET gate driver in conjunction with complementary ZTX618 ZTX718 C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Practical Power Dissipation* Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB P totp P tot T j:T stg VALUE -20 -20 -5 -6 -2.
5 -500 1.
5 1 -55 to +200 UNIT V V V A A mA W W °C * Device mounted on P.
C.
B.
with copper equal to 1 sq.
Inch minimum.
ZTX718 ELECTRIAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V (BR)CBO MIN.
-20 TYP.
-65 MAX.
UNIT V CONDITIONS.
I C=-100 µ A I C=-10mA* I E=-100 µ A V CB=-15V V (BR)CEO -20 -55 V V (BR)EBO -5 -8.
8 V I CBO -100 nA I EBO -100 nA V EB=-4V I CES -100 nA V CES =-15V V CE(sat) -16 -130 -145 -190 -0.
98 -40 -200 -220 -260 -1.
1 mV mV mV mV V I C=-0.
1A, I B=-10mA* I C=-1A, I B=-20mA* I C=-1.
5A, I B=-50mA* I C=-2.
5A, I B=-200mA* I C=-2.
5A, I B=-200mA* Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio V BE(sat) V BE(on) -0.
85 -0.
95 V I C =-2.
5A, V CE=-2V* h FE 300 300 150 35 15 150 475 450 230 70 30 180 MHz I C=-10mA, V CE=-2V* I C=-100mA, V CE=-2V* I C=-2A, V CE=-2V* I C=-4A, V CE=-2V* I C=-6A, V CE=-2V* I C=-50mA, V CE=-10V f=100MHz V CB=-10V, f=1MHz V CC=-10V, I C=-1A I B1=I B2=20mA Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT C obo t(on) t (off)...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)