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ZTX949

Zetex Semiconductors
Part Number ZTX949
Manufacturer Zetex Semiconductors
Description PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
Published Apr 17, 2005
Detailed Description PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 – JUNE 94 FEATURES * 4.5 Amps continuous current * Up to...
Datasheet PDF File ZTX949 PDF File

ZTX949
ZTX949

Overview
PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 – JUNE 94 FEATURES * 4.
5 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * Excellent gain up to 20 Amps * Very low leakage * Exceptional gain linearity down to 10mA * Spice model available ZTX949 C B E ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg -50 -30 -6 -20 -4.
5 1.
58 1.
2 E-Line TO92 Compatible VALUE UNIT V V V A A W W °C -55 to +200 *The power which can be dissipated assuming the device is mounted in a typical manner on a P.
C.
B.
with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltag Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R ≤1KΩ IEBO VCE(sat) -40 -80 -100 -240 -960 3-312 MIN.
-50 -50 -30 -6 TYP.
-80 -80 -45 -8 -50 -1 -50 -1 -10 -60 -100 -160 -320 -1100 MAX.
UNIT V V V V nA nA nA mV mV mV mV mV CONDITIONS.
IC=-100µA IC=-1µA, RB ≤1KΩ IC=-10mA* IE=-100µA VCB=-40V VCB=-40V, Tamb=100°C VCB=-40V VCB=-40V, Tamb=100°C VEB=-6V IC=-0.
5A, IB=-20mA* IC=-1A, IB=-20mA* IC=-2A, IB=-200mA* IC=-5A, IB=-300mA* IC=-5A, IB=-300mA* µA µA Base-Emitter Saturation Voltage VBE(sat) ZTX949 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times SYMBOL VBE(on) hFE 100 100 75 MIN.
TYP.
-860 200 200 140 35 100 122 120 130 MAX.
-1000 300 MHz pF ns ns UNIT mV CONDITIONS.
IC=-5A, VCE=-1V* IC=-...


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