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ZTX953

Zetex Semiconductors
Part Number ZTX953
Manufacturer Zetex Semiconductors
Description PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
Published Apr 17, 2005
Detailed Description PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 4 – JUNE 94 FEATURES * 3.5 Amps continuous current * Up to...
Datasheet PDF File ZTX953 PDF File

ZTX953
ZTX953

Overview
PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 4 – JUNE 94 FEATURES * 3.
5 Amps continuous current * Up to 10 Amps peak current * Very low saturation voltage * Excellent gain up to 10 Amps * Spice model available ZTX953 C B E ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg -140 -100 -6 -10 -3.
5 1.
58 1.
2 E-Line TO92 Compatible VALUE UNIT V V V A A W W °C -55 to +200 *The power which can be dissipated assuming the device is mounted in a typical manner on a P.
C.
B.
with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltag Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R ≤1KΩ IEBO VCE(sat) -20 -80 -140 -250 -960 3-318 MIN.
-140 -140 -100 -6 TYP.
-170 -170 -120 -8 -50 -1 -50 -1 -10 -50 -100 -170 -330 -1100 MAX.
UNIT V V V V nA nA nA mV mV mV mV mV CONDITIONS.
IC=-100µA IC=-1µA, RB ≤1KΩ IC=-10mA* IE=-100µA VCB=-100V VCB=-100V, Tamb=100°C VCB=-100V VCB=-100V, Tamb=100°C VEB=-6V IC=-100mA, IB=-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-4A, IB=-400mA* IC=-4A, IB=-400mA* µA µA Base-Emitter Saturation Voltage VBE(sat) ZTX953 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Base-Emitter Turn-On Voltage Static Forward Current Transfer SYMBOL VBE(on) hFE 100 100 50 30 MIN.
TYP.
-880 200 200 90 50 15 125 65 110 460 MAX.
-1100 300 UNIT mV CONDITIONS.
IC=-4A, VCE=-1V* IC=-10mA, VCE=-1V* IC=-1A, VCE=-1V* IC=-3A, VCE=-1V* IC=-4A, VCE=-1V* IC=-10A, VCE=-1V* MHz pF ns ns IC=-100mA, VCE=-10V f...


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