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ZTX956

Zetex Semiconductors
Part Number ZTX956
Manufacturer Zetex Semiconductors
Description PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
Published Apr 17, 2005
Detailed Description PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 – JUNE 94 FEATURES * 2 Amps continuous current * Up to 5...
Datasheet PDF File ZTX956 PDF File

ZTX956
ZTX956

Overview
PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 – JUNE 94 FEATURES * 2 Amps continuous current * Up to 5 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 2 Amps * Spice model available ZTX956 C B E ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg -220 -200 -6 -5 -2 1.
58 1.
2 E-Line TO92 Compatible VALUE UNIT V V V A A W W °C -55 to +200 *The power which can be dissipated assuming the device is mounted in a typical manner on a P.
C.
B.
with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltag Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R ≤1KΩ IEBO VCE(sat) -30 -110 -150 -920 MIN.
-220 -220 -200 -6 TYP.
-300 -300 -240 -8 -50 -1 -50 -1 -10 -50 -150 -250 -1050 MAX.
UNIT V V V V nA nA nA mV mV mV mV CONDITIONS.
IC=-100µA IC=-1µA, RB ≤1KΩ IC=-10mA* IE=-100µA VCB=-200V VCB=-200V, Tamb=100°C VCB=-200V VCB=-200V, Tamb=100°C VEB=-6V IC=-100mA, IB=-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-400mA* IC=-2A, IB=-400mA µA µA VBE(sat) 3-324 ZTX956 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times SYMBOL VBE(on) hFE 100 100 50 MIN.
TYP.
-770 200 200 150 10 110 32 67 1140 MAX.
-900 300 MHz pF ns ns UNIT mV CONDITIONS.
IC=-2A, VCE=-5V* IC=-10mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* IC=-5A, VCE=-5V* IC=-10...


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