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ZTX958

Zetex Semiconductors
Part Number ZTX958
Manufacturer Zetex Semiconductors
Description PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
Published Apr 17, 2005
Detailed Description PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 – JUNE 94 FEATURES * 0.5 Amp continuous current * Up to ...
Datasheet PDF File ZTX958 PDF File

ZTX958
ZTX958

Overview
PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 – JUNE 94 FEATURES * 0.
5 Amp continuous current * Up to 1.
5 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 1 Amp * Spice model available ZTX958 C B E ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg -400 -400 -6 -1.
5 -0.
5 1.
58 1.
2 E-Line TO92 Compatible VALUE UNIT V V V A A W W °C -55 to +200 *The power which can be dissipated assuming the device is mounted in a typical manner on a P.
C.
B.
with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltag Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R ≤1KΩ IEBO VCE(sat) VBE(sat) 3-330 -100 -150 -300 -790 MIN.
-400 -400 -400 -6 TYP.
-600 -600 -550 -8 -50 -1 -50 -1 -10 -150 -200 -400 -900 MAX.
UNIT V V V V nA nA CONDITIONS.
IC=-100µA IC=-1µA, RB ≤1KΩ IC=-10mA* IE=-100µA VCB=-300V VCB=-300V, Tamb=100°C VCB=-300V VCB=-300V, Tamb=100°C VEB=-6V IC=-10mA, IB=-1mA* IC=-100mA, IB=-10mA* IC=-500mA, IB=-100mA* IC=-500mA, IB=-100mA* µA µA nA mV mV mV mV ZTX958 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times SYMBOL VBE(on) hFE fT Cobo ton toff 100 100 10 MIN.
TYP.
-690 200 200 20 85 19 104 2400 MAX.
-800 300 MHz pF ns ns UNIT mV CONDITIONS.
IC=-500mA, VCE=-10V* IC=-10mA, VCE=-10V* IC=-500mA, VCE=-10V* IC=-1...


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