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PDTA123ET

NXP
Part Number PDTA123ET
Manufacturer NXP
Description PNP resistor-equipped transistor
Published Mar 22, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123ET PNP resistor-equipped transistor Product specificat...
Datasheet PDF File PDTA123ET PDF File

PDTA123ET
PDTA123ET


Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123ET PNP resistor-equipped transistor Product specification Supersedes data of 1998 May 18 1999 May 21 Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ.
2.
2 kΩ each) • Simplification of circuit design • Reduces number of components and board space.
APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors.
DESCRIPTION PNP resistor-equipped transistor in a SOT23 plastic package.
NPN complement: PDTC123ET.
PINNING PIN 1 2 3 MARKING TYPE NUMBER PDTA123ET Note 1.
∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
MARKING CODE(1) ∗21 base/input emitter/ground (+) collector/output MGA893 - 1 1 Top view 2 MAM100 PDTA123ET ndbook, 4 columns 3 3 R1 1 R2 2 Fig.
1 Simplified outline (SOT23) and symbol.
DESCRIPTION 1 2 3 Fig.
2 Equivalent inverter symbol.
1999 May 21 2 Philips Semiconductors Product specification PNP resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 ------R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain input-off voltage input-on voltage input resistor resistor ratio collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz CONDITIONS IE = 0; VCB = −50 V IB = 0; VCE = −30 V IB = 0; VCE = −30 V; Tj = 150 °C IC = 0; VEB = −5 V IC = −20 mA; VCE = −5 V IC = −1 mA; VCE = −5 V ...


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