DatasheetsPDF.com

PF0121

Hitachi Semiconductor
Part Number PF0121
Manufacturer Hitachi Semiconductor
Description MOS FET Power Amplifier Module for GSM Mobile Phone
Published Mar 22, 2005
Detailed Description PF0121 MOS FET Power Amplifier Module for GSM Mobile Phone ADE-208-097A (Z) 2nd Edition July 1996 Application For GSM C...
Datasheet PDF File PF0121 PDF File

PF0121
PF0121

Overview
PF0121 MOS FET Power Amplifier Module for GSM Mobile Phone ADE-208-097A (Z) 2nd Edition July 1996 Application For GSM CLASS2 890 to 915 MHz Features • Low power control current: 0.
9 mA Typ • High speed switching: 1.
5 µsec Typ • Wide power control range: 100 dB Typ Pin Arrangement • RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND PF0121 Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout G GND Z1 FB1 C2 FB2 C1 Z2 Pin VAPC VDD Pout C1 = 0.
01 µF (Ceramic chip capacitor) C2 = 330 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 Ω (Microstrip line) Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current APC voltage Input power Operating case temperature Storage temperature Symbol VDD I DD VAPC Pin Tc (op) Tstg Rating 17 6 8 20 –30 to +110 –40 to +110 Unit V A V mW °C °C 2 PF0121 Electrical Characteristics (Tc = 25°C) Item Drain cutoff current Total e...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)