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MJD32B

ST Microelectronics
Part Number MJD32B
Manufacturer ST Microelectronics
Description COMPLEMENTARY SILICON POWER TRANSISTORS
Published May 7, 2005
Detailed Description ® MJD31B/31C MJD32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS s s s STMicroelectronics PREFERRED SALESTYPES SURFA...
Datasheet PDF File MJD32B PDF File

MJD32B
MJD32B

Overview
® MJD31B/31C MJD32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS s s s STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) ELECTRICALLY SIMILAR TO TIP31B/C AND TIP32B/C 3 1 APPLICATIONS s GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs.
They are manufactured using Epitaxial Base technology for cost-effective performance.
DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P t ot T stg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Total Dissipation at Tc = 25 C Storage T emperature Max.
O perating Junction Temperature o Value MJD31B MJD32B 80 80 5 3 5 1 15 -65 to 150 150 MJD31C MJD32C 100 100 Uni t V V V A A A W o o C C For PNP type...


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