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MJD32C

Fairchild
Part Number MJD32C
Manufacturer Fairchild
Description General Purpose Amplifier
Published May 7, 2005
Detailed Description MJD32/32C MJD32/32C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • L...
Datasheet PDF File MJD32C PDF File

MJD32C
MJD32C

Overview
MJD32/32C MJD32/32C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP32 and TIP32C 1 D-PAK 1.
Base 1 I-PAK 3.
Emitter 2.
Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : MJD32 : MJD32C VCEO Collector-Emitter Voltage : MJD32 : MJD32C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) TJ TSTG Junction Temperature Storage Temperature Value - 40 - 100 - 40 - 100 -5 -3 -5 -1 15 1.
56 150 - 65 ~ 150 Units V V V V V A A A W W °C °C VEBO IC ICP IB PC Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : MJD32 : MJD32C Collector Cut-off Current : MJD32 : MJD32C ICES Collector Cut-off Current : MJD32 : MJD32C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product VCE = - 40V, VBE = 0 VCE = - 100V, VBE = 0 VBE = - 5V, IC = 0 VCE = - 4V, IC = - 1A VCE = - 4V, IC = - 3A IC = - 3, IB = - 375mA VCE = - 4A, IC = - 3A VCE = -10V, IC = - 500mA 3 25 10 -20 -20 -1 50 -1.
2 -1.
8 V V MHz µA µA mA VCE = - 40V, IB = 0 VCE = - 60V, IB = 0 -50 -50 µA µA Test Condition IC = - 30mA, IB = 0 Min.
-40 -100 Max.
Units V V ICEO * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2001 Fairchild Semiconductor Corporation Rev.
A2, June 2001 MJD32/32C Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 -10 VCE = -2V IC = 10 IB hFE, DC CURRENT GAIN 100 -1 V BE(sat) 10 -0.
1 VCE(sat) 1 -0.
01 -0.
1 -1 -10 -0.
01 -1E-3 -0.
01 -0.
1 -1 -10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1.
DC current Gain Figure 2.
Base...


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