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NTE16003

NTE
Part Number NTE16003
Manufacturer NTE
Description Silicon NPN Transistor
Published May 9, 2005
Detailed Description NTE16003 Silicon NPN Transistor RF Power Output, PO = 7W, 175MHz Description: The NTE16003 is an RF power transistor in ...
Datasheet PDF File NTE16003 PDF File

NTE16003
NTE16003

Overview
NTE16003 Silicon NPN Transistor RF Power Output, PO = 7W, 175MHz Description: The NTE16003 is an RF power transistor in a TO60 type case that employs a multi emitter electrode design.
This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance, and low output capacitance.
This device is intended for Class A, B, or C amplifier, oscillator, or frequency multiplier circuits and is specifically designed for operation in the VHF–UHF region.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO .
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65V Collector–Emitter Voltage, VCEO .
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40V Emitter–Base Voltage, VEBO .
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4V Continuous Collector Current, IC (max) .
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1.
5A Total Device Dissipation (TC = +25°C), PD .
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11.
6W Derate Above 25°C .
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66.
4mW/°C Operating Junction Temperature Range, TJ .
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–65° to +200°C Storage Temperature Range, Tstg .
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–65° to +200°C Thermal Resistance, Junction–to–Case, RthJC .
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+15°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter–Base Breakdown Voltage Symbol ICEO Test Condit...


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