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NTE16006

NTE
Part Number NTE16006
Manufacturer NTE
Description Silicon NPN Transistor
Published May 9, 2005
Detailed Description NTE16006 Silicon NPN Transistor Low Frequency Output Amp w/High Current Gain Features: D High DC Current Gain D Low Coll...
Datasheet PDF File NTE16006 PDF File

NTE16006
NTE16006

Overview
NTE16006 Silicon NPN Transistor Low Frequency Output Amp w/High Current Gain Features: D High DC Current Gain D Low Collector–Emitter Saturation Voltage D An M type mold package that allows easy manual and automatic insertion.
Can be firmly mounted flush to PCB surface Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO .
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20V Collector–Emitter Voltage, VCEO .
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20V Emitter–Base Voltage, VEBO .
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15V Collector Current, IC Continuous .
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700mA Peak .
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1.
5A Collector Power Dissipation (Note 1), PC .
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1W Operating Junction Temperature, TJ .
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+150°C Storage Temperature Range, Tstg .
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–55 ° to +150°C Note 1.
Copper foil on PCB against Collector: 1.
7mm thick, 1cm2 in area.
Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cut–Off Current Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage DC Current Gain Collector–Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Symbol ICBO ICEO VCBO VCEO VEBO hFE VCE(sat) fT Cob Test Conditions VCB = 15V, IE = 0 VCE = 15V, IB = 0 IC = 10µA, IE = 0 IC = 1mA...


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