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NTE16004

Part Number	NTE16004
Manufacturer	NTE
Description	Silicon Complementary Transistors
Published	May 9, 2005
Detailed Description	NTE16004 (PNP) & NTE16005 (NPN) Silicon Complementary Transistors High Current, General Purpose Absolute Maximum Ratings...
Datasheet	NTE16004 PDF File

Overview

NTE16004 (PNP) & NTE16005 (NPN) Silicon Complementary Transistors High Current, General Purpose Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO .
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75V Collector–Base Voltage, VCBO .
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100V Emitter–Base Voltage, VEBO .
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7V Continuous Collector Current, IC .
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2A Base Current, IB .
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1A Total Device Dissipation (TC = +25°C), PD .
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10W Derate Above 25°C .
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0.
057mW/°C Operating Junction Temperature Range, TJ .
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–65° to +200°C Storage Temperature Range, Tstg .
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–65° to +200°C Thermal Resistance, Junction–to–Case, RthJC .
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17.
5°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter OFF Characteristics Collector–Emitter Breakdown Voltage Collector Cutoff Current V(BR)CEO) IC = 100mA, IB = 0 ICEX IEBO hFE VCE(sat) VCE = 100V, VBE = 1.
5V VCE = 70V, VBE = 1.
5V, TC = +150°C Emitter Cutoff Current ON Characteristics (Note 1) DC Current Gain IC = 500mA, VCE = 4V IC = 1A, VCE = 2V Collector–Emitter Saturation Voltage NTE16004 NTE16005 Base–Emitter ON Voltage Small–Signal Characteristics Small–Signal Curre...

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