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NTE2319

NTE
Part Number NTE2319
Manufacturer NTE
Description Silicon NPN Transistor
Published May 9, 2005
Detailed Description NTE2319 Silicon NPN Transistor High Voltage, High Speed Power Switch Description: The NTE2319 is a silicon NPN transisto...
Datasheet PDF File NTE2319 PDF File

NTE2319
NTE2319

Overview
NTE2319 Silicon NPN Transistor High Voltage, High Speed Power Switch Description: The NTE2319 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical.
It is particularly suited for line–operated switchmode applications.
Features: D Fast Turn–On Times @ TC = +100°C: Inductive Fall Time: 50ns Typ Inductive Crossover Time: 90ns Typ Inductive Storage Time: 800ns Typ D 100°C Performance Specified for: Reverse–Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Current Applications: D Switching Regulators D Inverters D Solenoids D Relay Drivers D Motor Controls D Deflection Circuits Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO .
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450V Collector–Emitter Voltage, VCEV .
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850V Emitter–Base Voltage, VEB .
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6V Collector Current, IC Continuous .
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15A Peak (Note 1) .
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20A Base Current, IB Continuous .
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10A Peak (Note 1) .
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15A Total Device Dissipation, PD TC = +25°C .
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175W TC = +100°C .
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