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NTE2336

NTE
Part Number NTE2336
Manufacturer NTE
Description Silicon NPN Transistor
Published May 9, 2005
Detailed Description NTE2336 Silicon NPN Transistor Darlington Switch w/Internal Damper & Zener Diode Features: D 60V Zener Diode Built–In Be...
Datasheet PDF File NTE2336 PDF File

NTE2336
NTE2336

Overview
NTE2336 Silicon NPN Transistor Darlington Switch w/Internal Damper & Zener Diode Features: D 60V Zener Diode Built–In Between Collector and Base D Low Fluctuation in Breakdown Voltages D High Energy Handling Capability D High Speed Switching Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO .
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60 ±10V Collector–Emitter Voltage, VCEO .
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60 ±10V Emitter–Base Voltage, VEBO .
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7V Collector Current, IC Continuous .
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8A Peak .
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12A Collector Power Dissipation (TC = +25°C), PC .
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45W Collector Power Dissipation (TA = +25°C), PC .
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2W Operating Junction Temperature, TJ .
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+150°C Storage Temperature Range, Tstg .
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–55° to +150°C Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current Collector–Emitter Voltage DC Current Gain Symbol ICBO IEBO VCEO hFE VCE(sat) VBE(sat) fT Test Conditions VCB = 50V, IE = 0 VEB = 7V, IC = 0 IC = 5mA, IB = 0 VCE = 3V, IC = 4A VCE = 3V, IC = 8A Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Transition Frequency IC = 4A...


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