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NTE2339

NTE
Part Number NTE2339
Manufacturer NTE
Description Silicon NPN Transistor
Published May 9, 2005
Detailed Description NTE2339 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage, High Reliability D Fa...
Datasheet PDF File NTE2339 PDF File

NTE2339
NTE2339

Overview
NTE2339 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide Safe Operating Area Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO .
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1100V Collector–Emitter Voltage, VCEO .
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800V Emitter–Base Voltage, VEBO .
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7V Collector Current, IC Continuous .
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3A Peak (Note 1) .
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10A Collector Dissipation (TC = +25°C), PC .
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30W Operating Junction Temperature, TJ .
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+150°C Storage Temperature Range, Tstg .
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–55° to +150°C Note 1.
Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Symbol ICBO IEBO hFE (1) hFE (2) fT Cob VBE(sat) Test Conditions VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 200mA VCE = 5V, IC = 1A VCE = 10V, IC 200mA VCB = 10V, f = 1MHz IC = 1.
5A, IB = 300mA Min – – 20 8 – – – – Typ – – – – 15 60 – – Max 10 10 40 – – – 2.
0 1.
5 MHz pF V V Unit µA µA VCE(sat) IC = 1.
5A, IB ...


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