DatasheetsPDF.com

NTE2378

NTE
Part Number NTE2378
Manufacturer NTE
Description N-CHANNEL MOSFET
Published May 9, 2005
Detailed Description NTE2378 MOSFET N–Channel Enhancement Mode, High Speed Switch Description: The NTE2378 is an N–Channel Enhancement Mode P...
Datasheet PDF File NTE2378 PDF File

NTE2378
NTE2378

Overview
NTE2378 MOSFET N–Channel Enhancement Mode, High Speed Switch Description: The NTE2378 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor.
Easy drive and very fast switching times make this device ideal for high speed switching applications.
Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control.
Features: D Low ON–State Resistance D Very High–Speed Switching D Converters Absolute Maximum Ratings: (TA = +25°C) Drain–Source Voltage, VDSS .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
900V Gate–Source Voltage, VGSS .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
±30V DC Drain Current, ID .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
5A Pulsed Drain Current (Note 1), IDP .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
10A Allowable Power Dissipation (TC = +25°C), PD .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
120W Maximum Channel Temperature, Tch .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
+150°C Storage Temperature Range, Tstg .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
–55° to +150°C Note 1.
Pulse Width ≤ 10µs, Duty Cycle ≤ 1%.
Note 2.
Be careful in handling the NTE2378 because it has no protection diode between gate and source.
Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Drain–Source Breakdown Voltage Zero–Gate Voltage Drain Current Gate–Source Leakage Current Cutoff Voltage Static Drain–Source On Resistance Forward Transconductance Symbol Test Conditions Min 900 – – 2 – 1.
0 Typ – – – – 2.
8 2.
0 Max – 1.
0 ±100 3 3.
6 – Unit V mA nA V Ω mho V(BR)DSS ID = 1mA, VGS = 0 IDSS IGS...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)