DatasheetsPDF.com

NTE2399

Part Number	NTE2399
Manufacturer	NTE
Description	N-CHANNEL MOSFET
Published	May 9, 2005
Detailed Description	NTE2399 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D ...
Datasheet	NTE2399 PDF File

Overview

NTE2399 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C .
.
.
.
3.
1A TC = +100°C .
.
.
.
2.
0A Pulsed Drain Current (Note 1), IDM .
12A Power Dissipation ...

Similar Datasheet

NTE23 Silicon NPN Transistor - NTE
NTE230 Silicon Controlled Rectifier - NTE
NTE2300 Silicon NPN Transistor - NTE
NTE2301 Silicon NPN Transistor - NTE
NTE2302 Silicon NPN Transistor - NTE
NTE2303 Silicon NPN Transistor - NTE
NTE2304 Silicon NPN Transistor - NTE
NTE2305 Silicon Complementary Transistors - NTE
NTE2306 Silicon Complementary Transistors - NTE
NTE2307 Silicon NPN Transistor - NTE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)