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NDH853N

Fairchild
Part Number NDH853N
Manufacturer Fairchild
Description N-Channel MOSFET
Published May 12, 2005
Detailed Description May 1997 NDH853N N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mod...
Datasheet PDF File NDH853N PDF File

NDH853N
NDH853N

Overview
May 1997 NDH853N N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as battery powered circuits or portable electronics where fast switching, low in-line power loss, and resistance to transients are needed.
Features 7.
6 A, 30 V.
RDS(ON) = 0.
017 Ω @ VGS = 10 V RDS(ON) = 0.
025 Ω @ VGS = 4.
5 V.
High density cell design for extremely low RDS(ON).
Proprietary SuperSOTTM-8 small outline surface mount package with high power and current handling capability.
___________________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) (Note 1a) NDH853N 30 ±20 7.
6 23 1.
8 1 0.
9 -55 to 150 Units V V A W TJ,TSTG Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 70 20 °C/W °C/W © 1997 Fairchild Semiconductor Corporation NDH853N Rev.
C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V TJ= 55°C Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V VDS = VGS, ID = 250 µA TJ= 125°C Static Drain-Source On-Resistance VGS = 10 V, ID = 7.
6 A TJ= 125°C VGS = 4.
5 V, ID = 6...


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