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NDH854P

Fairchild
Part Number NDH854P
Manufacturer Fairchild
Description P-Channel MOSFET
Published May 12, 2005
Detailed Description May 1997 NDH854P P-Channel Enhancement Mode Field Effect Transistor General Description SuperSOTTM-8 P-Channel enhancem...
Datasheet PDF File NDH854P PDF File

NDH854P
NDH854P

Overview
May 1997 NDH854P P-Channel Enhancement Mode Field Effect Transistor General Description SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features -5.
1 A, -30 V.
RDS(ON) = 0.
032 Ω @ VGS = -10 V RDS(ON) = 0.
052 Ω @ VGS = -4.
5V.
Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
____________________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD T A = 25°C unless otherwise noted NDH854P -30 ±20 (Note 1a) Units V V A -5.
1 -15 Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) 1.
8 1 0.
9 -55 to 150 W TJ,TSTG Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 70 20 °C/W °C/W © 1997 Fairchild Semiconductor Corporation NDH854P Rev.
D Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 µA VDS = -24 V, VGS = 0 V TJ = 55oC Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V VDS = VGS, ID...


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