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IRFR3418

International Rectifier
Part Number IRFR3418
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Sep 27, 2005
Detailed Description PD - 94452 HEXFET® Power MOSFET l IRFR3418 IRFU3418 ID 30A Applications High frequency DC-DC converters VDSS 80V RD...
Datasheet PDF File IRFR3418 PDF File

IRFR3418
IRFR3418

Overview
PD - 94452 HEXFET® Power MOSFET l IRFR3418 IRFU3418 ID 30A Applications High frequency DC-DC converters VDSS 80V RDS(on) Max 14m: Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current l D-Pak IRFR3418 I-Pak IRFU3418 Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max.
80 ± 20 70 50 280 140 3.
8 0.
95 5.
2 -55 to + 175 Units V h A W c Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and e W/°C V/ns °C Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.
6mm from case ) Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) * Junction-to-Ambient Typ.
––– ––– ––– Max.
1.
05 40 110 Units °C/W Notes  through † are on page 10 www.
irf.
com 1 09/12/02 IRFR/U3418 Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
Typ.
Max.
Units 80 ––– ––– 3.
5 ––– ––– ––– ––– ––– 0.
08 11.
5 ––– ––– ––– ––– ––– ––– ––– 14 5.
5 1.
0 250 100 -100 nA V mΩ V µA Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 18A VDS = 80V, VGS = 0V VDS = 64V, VGS = 0V, TJ = 150°C VGS = 20V VGS = -20V V/°C Reference to 25°C, ID = 1mA f VDS = VGS, ID = 250µA Dynamic @ TJ = 25°C (unless otherwise specified) Parameter gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Forward Transconductance Total Gate ...


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