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STGD7NB60F

ST Microelectronics
Part Number STGD7NB60F
Manufacturer ST Microelectronics
Description N-CHANNEL IGBT
Published Sep 28, 2005
Detailed Description STGP7NB60F - STGD7NB60F N-CHANNEL 7A - 600V - TO-220 / DPAK PowerMESH™ IGBT PRELIMINARY DATA TYPE STGP7NB60F STGD7NB60F ...
Datasheet PDF File STGD7NB60F PDF File

STGD7NB60F
STGD7NB60F


Overview
STGP7NB60F - STGD7NB60F N-CHANNEL 7A - 600V - TO-220 / DPAK PowerMESH™ IGBT PRELIMINARY DATA TYPE STGP7NB60F STGD7NB60F s s s s s s s VCES 600 V 600 V VCE(sat) (Max) @25°C < 2.
4 V < 2.
4 V IC @100°C 7A 7A 3 3 1 2 HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL (DPAK) 1 TO-220 DPAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances.
The suffix "F" identifies a family optimized to achieve very low switching switching times for frequency applications (<40KHZ) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS MOTOR CONTROLS s SMPS AND PFC AND BOTH HARD SWITCH AND RESONANT TOPOLOGIES s ABSOLUTE MAXIMUM RATINGS Symbol VCES VGE IC IC ICM ( ) PTOT Tstg Tj Parameter TO-220 Collector-Emitter Voltage (VGS = 0) Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max.
Operating Junction Temperature 80 0.
64 – 55 to 150 150 600 ±20 14 7 56 70 0.
56 Value DPAK V V A A A W W/°C °C °C Unit ( ) PULSE WIDTH LIMITED BY SAFE OPERATING AREA June 2003 This is preliminary information on a new product now in development or undergoing evaluation.
Details are subject to change without notice.
1/8 STGP7NB60F - STGD7NB60F THERMAL DATA TO-220 Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.
56 62.
5 DPAK 1.
78 100 °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) ICES IGES Parameter Collectro-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 µA, VGE = 0 VCE = Max Rating, TC = 25 °C VCE = Max Rati...


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