DatasheetsPDF.com

STGD7NB60M

ST Microelectronics
Part Number STGD7NB60M
Manufacturer ST Microelectronics
Description N-CHANNEL 7A - 600V TO-220 / DPAK PowerMESH IGBT
Published Dec 23, 2009
Detailed Description STGP7NB60M - STGD7NB60M N-CHANNEL 7A - 600V TO-220 / DPAK PowerMESH™ IGBT TYPE STGP7NB60M STGD7NB60M s s s s s s s VCES...
Datasheet PDF File STGD7NB60M PDF File

STGD7NB60M
STGD7NB60M


Overview
STGP7NB60M - STGD7NB60M N-CHANNEL 7A - 600V TO-220 / DPAK PowerMESH™ IGBT TYPE STGP7NB60M STGD7NB60M s s s s s s s VCES 600 V 600 V VCE(sat) (Max) @25°C < 1.
9 V < 1.
9 V IC @100°C 7A 7A 3 3 1 2 HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE 1 TO-220 DPAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances.
The suffix "M" identifies a family optimized to achieve very low switching switching times for high frequency applications (<20KHZ) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS www.
DataSheet4U.
com s s MOTOR CONTROLS SMPS AND PFC AND BOTH HARD SWITCH AND RESONANT TOPOLOGIES ORDERING INFORMATION SALES TYPE STGP7NB60M STGD7NB60MT4 MARKING GP7NB60M GD7NB60M PACKAGE TO-220 DPAK PACKAGING TUBE TAPE & REEL June 2003 1/11 STGP7NB60M - STGD7NB60M ABSOLUTE MAXIMUM RATINGS Symbol VCES VGE IC IC ICM ( ) PTOT Tstg Tj Parameter TO-220 Collector-Emitter Voltage (VGS = 0) Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max.
Operating Junction Temperature 80 0.
64 – 55 to 150 150 600 ±20 14 7 56 70 0.
56 Value DPAK V V A A A W W/°C °C °C Unit ( ) Pulse width limited by safe operating area THERMAL DATA TO-220 Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.
56 62.
5 DPAK 1.
78 100 °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions IC = 250 µA, VGE = 0 VCE = Max Rating, TC = 25 °C VCE = Max Rating, TC = 125 °C VGE = ± 20V , VCE = 0 Min.
600 50 100 ±100 Typ.
Max.
Unit V µA µA nA VBR(CES) Collector-Emitter Breakdown Volt...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)