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STGD7NB60H

ST Microelectronics
Part Number STGD7NB60H
Manufacturer ST Microelectronics
Description N-CHANNEL IGBT
Published Sep 28, 2005
Detailed Description STGD7NB60H N-CHANNEL 7A - 600V - DPAK PowerMESH™ IGBT TYPE STD7NB60H s s s s s s s s VCES 600 V VCE(sat) < 2.8 V IC 7...
Datasheet PDF File STGD7NB60H PDF File

STGD7NB60H
STGD7NB60H

Overview
STGD7NB60H N-CHANNEL 7A - 600V - DPAK PowerMESH™ IGBT TYPE STD7NB60H s s s s s s s s VCES 600 V VCE(sat) < 2.
8 V IC 7A s HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION CO-PACKAGED WITH TURBOSWITCHT TYPICAL SHORT CIRCUIT WITHSTAND TIME 5MICROS S-family, 4 micro H family ANTIPARALLEL DIODE 3 1 DPAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.
APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM (s) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuos) at TC = 25°C Collector Current (continuos) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max.
Operating Junction Temperature Value 600 20 ± 20 14 7 56 55 0.
44 –65 to 150 150 Unit V V V A A A W W/°C °C °C July 2000 1/9 STGD7NB60H THERMAL DATA Rthj-case Rthj-amb Rthc-sink Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ 2.
27 100 1.
5 °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) ICES IGES Parameter Collectro-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 µA, VGE = 0 VCE = Max Rating, TC = 25 °C VCE = Max Rating, TC = 125 °C VGE = ± 20V , VCE = 0 Min.
600 10 100 ±100 Typ.
Max.
Unit V µA µA nA ON (1) Symbol VGE...


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