DatasheetsPDF.com

STGD7NB60S

ST Microelectronics
Part Number STGD7NB60S
Manufacturer ST Microelectronics
Description N-CHANNEL IGBT
Published Dec 23, 2009
Detailed Description ® STGD7NB60S N-CHANNEL 7A - 600V - DPAK Power MESH™ IGBT TYPE STGD7NB60S s V CES 600 V V CE(sat ) < 1.6 V IC 7 A s...
Datasheet PDF File STGD7NB60S PDF File

STGD7NB60S
STGD7NB60S

Overview
® STGD7NB60S N-CHANNEL 7A - 600V - DPAK Power MESH™ IGBT TYPE STGD7NB60S s V CES 600 V V CE(sat ) < 1.
6 V IC 7 A s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT 1 3 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, SGS-Thomson has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances.
The suffix ”S” identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz).
APPLICATIONS s LIGHT DIMMER s STATIC RELAYS s MOTOR CONTROL DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM www.
DataSheet4U.
com ABSOLUTE MAXIMUM RATINGS Symb ol V CES V ECR V GE IC IC I CM ( • ) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max.
Operating Junction Temperature o o o Value 600 20 ± 20 15 7 60 55 0.
4 -65 to 150 -40 to 150 Un it V V V A A A W W /o C o o C C (•) Pulse width limited by safe operating area October 1998 1/8 STGD7NB60S THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp 2.
27 100 1.
5 o o C/W C/W o C/W ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbo l V BR(CES) V BR(ECR) I CES IGES Parameter Collector-Emitt er Breakdown Voltage Emitter-Collector Breakdown Voltage Collector cut-off (V GE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Con ditions I C = 250 µ A I C = 1 mA V GE = 0 V GE = 0 T j = 25 oC o T j = 125 C V CE = 0 Min.
600 20 10 100 ± 100 Typ.
Max.
Unit V V µA µA nA V CE = Max Rating V CE = Max Rating V GE = ± 20 V ON (∗) Symbo l V GE(th) V CE(SAT ) Parameter Gate Threshold V...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)