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STGP3NB60S

ST Microelectronics
Part Number STGP3NB60S
Manufacturer ST Microelectronics
Description N-CHANNEL IGBT
Published Sep 28, 2005
Detailed Description STGP3NB60S STGD3NB60S N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH™ IGBT TYPE STGP3NB60S STGD3NB60S s s s s VCES 600 V...
Datasheet PDF File STGP3NB60S PDF File

STGP3NB60S
STGP3NB60S

Overview
STGP3NB60S STGD3NB60S N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH™ IGBT TYPE STGP3NB60S STGD3NB60S s s s s VCES 600 V 600 V VCE(sat) < 1.
5 V < 1.
5 V IC 3A 3A 3 1 3 1 2 HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL (SMD VERSION) DPAK TO-220 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.
The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz).
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s MOTOR CONTROL s LIGHT DIMMER s STATIC RELAYS ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) PTOT Tstg Tj Parameter STGP3NB60S Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max.
Operating Junction Temperature 65 0.
32 –65 to 150 150 600 20 ±20 6 3 24 45 Value STGD3NB60S V V V A A A W W/°C °C °C Unit (q ) Pulse width limited by safe operating area August 2002 1/10 STGP3NB60S - STGD3NB60S THERMAL DATA TO-220 Rthj-case Rthj-amb Rthc-h Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-heatsink Typ 1.
92 62.
5 0.
5 DPAK 2.
75 100 °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) ICES IGES Parameter Collectro-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 µA, VGE = 0 VCE = Max Rating, TC = 25 °C VCE = Max Rating, TC = 125 °C VGE = ±20V , VCE = 0 Min.
600 10 100 ±100 Typ.
Max.
Unit V µA µA nA ON (1) Symbol VGE(th) VCE(sat) Parameter Gate Threshold Voltage Collector-Emitte...


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