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STGP3NB60F

ST Microelectronics
Part Number STGP3NB60F
Manufacturer ST Microelectronics
Description N-CHANNEL IGBT
Published Sep 28, 2005
Detailed Description STGP3NB60F - STGD3NB60F STGP3NB60FD-STGF3NB60FD-STGB3NB60FD N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2PAK PowerMESH™ ...
Datasheet PDF File STGP3NB60F PDF File

STGP3NB60F
STGP3NB60F

Overview
STGP3NB60F - STGD3NB60F STGP3NB60FD-STGF3NB60FD-STGB3NB60FD N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2PAK PowerMESH™ IGBT TYPE STGP3NB60F STGD3NB60F STGP3NB60FD STGF3NB60FD STGB3NB60FD s s s s s s s VCES 600 V 600 V 600 V 600 V 600 V VCE(sat) (Typ) @125°C < 2.
4 V < 2.
4 V < 2.
4 V < 2.
4 V < 2.
4 V IC @125°C 3A 3A 3A 3A 3A 3 1 2 1 2 3 TO-220 TO-220FP HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED 3 3 1 1 D2PAK DPAK INTERNAL SCHEMATIC DIAGRAM DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.
The suffix “F” identifies a family optimized to achieve very low switching times for frequency applications (<40 KHz) APPLICATIONS s MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCHING AND RESONANT TOPOLOGIES Std.
Version “D” Version ORDERING INFORMATION SALES TYPE STGP3NB60F STGD3NB60FT4 STGP3NB60FD STGF3NB60FD STGB3NB60FDT4 MARKING GP3NB60F GD3NB60F GP3NB60FD GF3NB60FD GB3NB60FD PACKAGE TO-220 DPAK TO-220 TO-220FP D2PAK PACKAGING TUBE TAPE & REEL TUBE TUBE TAPE & REEL June 2003 1/14 STGP3NB60F/STGD3NB60F/STGP3NB60FD/STGF3NB60FD/STGB3NB60FD ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) If (1) Ifm (1) PTOT VISO Tstg Tj Parameter TO-220/D2PAK Value TO-220FP DPAK Unit Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Forward Current Forward Current Pulsed Total Dissipation at TC = 25°C Derating Factor Insulation Withstand Voltage A.
C.
Storage Temperature Max.
Operating Junction Temperature 68 0.
55 -- 600 20 ±20 6 3 24 3 24 25 0.
2 2500 – 55 to 150 150 60 0.
47 -- V V V A A A A A W W/°C V °C °C ( ) Pulse width limited b...


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