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SSM3K16TE

Toshiba Semiconductor
Part Number SSM3K16TE
Manufacturer Toshiba Semiconductor
Description High Speed Switching Applications Analog Switch Applications
Published Sep 28, 2005
Detailed Description SSM3K16TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16TE High Speed Switching Applications Analog...
Datasheet PDF File SSM3K16TE PDF File

SSM3K16TE
SSM3K16TE

Overview
SSM3K16TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16TE High Speed Switching Applications Analog Switch Applications · · Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.
0 Ω (max) (@VGS = 4 V) : Ron = 4.
0 Ω (max) (@VGS = 2.
5 V) : Ron = 15 Ω (max) (@VGS = 1.
5 V) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD Tch Tstg Rating 20 ±10 100 200 100 150 -55~150 Unit V V mA mW °C °C Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-1B1B Marking 3 Equivalent Circuit 3 Weight: 2.
2 mg (typ.
) DS 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity.
Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
1 2002-01-17 SSM3K16TE Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth ½Yfs½ Test Condition VGS = ±10 V, VDS = 0 ID = 0.
1 mA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.
1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 4 V Drain-Source ON resistance RDS (ON) ID = 10 mA, VGS = 2.
5 V ID = 1 mA, VGS = 1.
5 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = 3 V, ID = 10 mA, VGS = 0~2.
5 V Min ¾ 20 ¾ 0.
6 40 ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ Typ.
¾ ¾ ¾ ¾ ¾ 1.
5 2.
2 5.
2 9.
3 4.
5 9.
8 70 125 Max ±1 ¾ 1 1.
1 ¾ 3.
0 4.
0 15 ¾ ¾ ¾ ¾ ¾ pF pF pF ns W Unit mA V mA V mS Switching Time Test Circuit (a) Test circuit 2.
5 V 0 10 ...


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