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SSM3K16FS

Toshiba Semiconductor
Part Number SSM3K16FS
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Feb 14, 2008
Detailed Description SSM3K16FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FS High Speed Switching Applications Analog...
Datasheet PDF File SSM3K16FS PDF File

SSM3K16FS
SSM3K16FS

Overview
SSM3K16FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FS High Speed Switching Applications Analog Switch Applications Unit: mm • Suitable for high-density mounting due to compact package • Low on resistance: Ron = 3.
0 Ω (max) (@VGS = 4 V) : Ron = 4.
0 Ω (max) (@VGS = 2.
5 V) : Ron = 15 Ω (max) (@VGS = 1.
5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ±10 V Drain current DC Pulse ID 100 mA IDP 200 Drain power dissipation (Ta = 25°C) PD 100 mW Channel temperature Tch 150 °C JEDEC ― Storage temperature range Tstg −55 to 150 °C JEITA ― Note: Using continuously under heavy loads (e.
g.
the application of TOSHIBA 2-2H1B high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the Weight: 2.
4 mg (typ.
) reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Marking Internal connections 3 3 DS 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity.
Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
Start of commercial production 2001-03 1 2014-03-01 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capaci...


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