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KRC282M

Korea Electronics
Part Number KRC282M
Manufacturer Korea Electronics
Description (KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR
Published Oct 28, 2005
Detailed Description SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES High emitter-base voltage : VEBO=...
Datasheet PDF File KRC282M PDF File

KRC282M
KRC282M

Overview
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
FEATURES High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.
) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.
) (IB=5mA) With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
C H KRC281M~KRC286M EPITAXIAL PLANAR NPN TRANSISTOR B A O M EQUIVALENT CIRCUIT J E E C B R1 1 L 2 3 N DIM MILLIMETERS A 3.
20 MAX B 4.
30 MAX C 0.
55 MAX _ 0.
15 D 2.
40 + E 1.
27 F 2.
30 _ 0.
50 G 14.
00 + H 0.
60 MAX J 1.
05 K 1.
45 L 25 0.
80 M N 0.
55 MAX O 0.
75 F 1.
EMITTER 2.
COLLECTOR 3.
BASE K E MAXIMUM RATING (Ta=25 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 50 20 25 300 400 150 -55 150 UNIT V V V mA W CHARACTERISTIC 2002.
12.
5 Revision No : 1 D G TO-92M 1/2 KRC281M~...


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