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KRC282U

KEC
Part Number KRC282U
Manufacturer KEC
Description EPITAXIAL PLANAR NPN TRANSISTOR
Published Jun 12, 2010
Detailed Description SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES High emitter-base voltage : VEBO=...
Datasheet PDF File KRC282U PDF File

KRC282U
KRC282U

Overview
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
FEATURES High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.
) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.
) (IB=5mA) With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
A J KRC281U~KRC286U EPITAXIAL PLANAR NPN TRANSISTOR www.
DataSheet4U.
com E M B M D 3 2 1 C EQUIVALENT CIRCUIT C B R1 H N K 1.
EMITTER 2.
BASE 3.
COLLECTOR N DIM A B C D E G H J K L M N MILLIMETERS _ 0.
20 2.
00 + _ 0.
15 1.
25 + _ 0.
10 0.
90 + 0.
3+0.
10/-0.
05 _ 0.
20 2.
10 + 0.
65 0.
15+0.
1/-0.
06 1.
30 0.
00~0.
10 0.
70 0.
42 0.
10 MIN E L G USM MAXIMUM RATING (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 50 20 25 300 100 150 -55 150 UNIT V V V mA mW CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Marking MARK SPEC TYPE MARK KRC281U KRC282U KRC283U KRC284U KRC285U KRC286U MQ MR MS MT MU MV Type Name 2005.
5.
9 Revision No : 0 1/2 KRC281U~KRC286U www.
DataSheet4U.
com ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector-Emitter Saturation Voltage DC Current Gain KRC281U KRC282U KRC283U Input Resistor KRC284U KRC285U KRC286U Transition Frequency Collector Output Capacitance * Characteristic of Transistor Only.
Note) hFE Classification B:350 1200 fT * Cob VCE=6V, IC=4mA, VCB=10V, IE=0, f=1MHz R1 SYMBOL BVCEO BVCBO BVEBO ICBO VCE(sat) hFE TEST CONDITION IC=1mA IC=50 A IE=50 A VCB=50V, IE=0 IC=30mA, IB=3mA VCE=2V, IC=4mA MIN.
20 50 25 350 TYP.
2.
2 4.
7 5.
6 6.
8 10 22 30 4.
8 MAX.
0.
1 0.
1 1200 MHz pF k UNIT V V V A V 2005.
5.
9 Revision No : 0 2/2 ...


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