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KRC283S

Korea Electronics
Part Number KRC283S
Manufacturer Korea Electronics
Description EPITAXIAL PLANAR NPN TRANSISTOR
Published Oct 28, 2005
Detailed Description SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES High emitter-base voltage : VEBO=...
Datasheet PDF File KRC283S PDF File

KRC283S
KRC283S

Overview
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
FEATURES High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.
) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.
) (IB=5mA) With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT C R1 B KRC281S~KRC286S EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.
93+_ 0.
20 B 1.
30+0.
20/-0.
15 A G H D 23 C 1.
30 MAX D 0.
40+0.
15/-0.
05 E 2.
40+0.
30/-0.
20 1 G 1.
90 H 0.
95 J 0.
13+0.
10/-0.
05 K 0.
00 ~ 0.
10 Q PP L 0.
55 M 0.
20 MIN N 1.
00+0.
20/-0.
10 C N K J P7 Q 0.
1 MAX M 1.
EMITTER 2.
BASE 3.
COLLECTOR E SOT-23 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range MARK SPEC TYPE KRC281S KRC282S KRC283S KRC284S KRC285S KRC286S hFE classification B MQB MRB MSB MTB MUB MVB SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 50 20 25 300 150 150 -55 150 UNIT V V V mA mW Marking Type Name Lot No.
2008.
10.
29 Revision No : 2 1/2 KRC281S~KRC286S ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector-Emitter Saturation Voltage DC Current Gain BVCEO BVCBO BVEBO ICBO VCE(sat) hFE KRC281S KRC282S Input Resistor KRC283S KRC284S R1 KRC285S KRC286S Transition Frequency fT * Collector Output Capacitance * Characteristic of Transistor Only.
Note) hFE Classification B:350 1200 Cob TEST CONDITION IC=1mA IC=50 A IE=50 A VCB=50V, IE=0 IC=30mA, IB=3mA VCE=2V, IC=4mA VCE=6V, IC=4mA, VCB=10V, IE=0, f=1MHz MIN.
20 50 25 350 1.
54 3.
29 3.
92 4.
76 7 15.
4 - TYP.
2.
2 4.
7 5.
6 6.
8 10 22 30 4.
8 MAX.
0.
1 0.
1 1200 2.
86 6.
11 7.
28 8.
84 13 28.
6 - UNIT V V V A V k MHz pF 2008.
10.
29 Revision No : 2 2/2 ...


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