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KRC282S

Korea Electronics
Part Number KRC282S
Manufacturer Korea Electronics
Description EPITAXIAL PLANAR NPN TRANSISTOR
Published Oct 28, 2005
Detailed Description SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES High emitter-base voltage : VEBO=...
Datasheet PDF File KRC282S PDF File

KRC282S
KRC282S

Overview
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
FEATURES High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.
) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.
) (IB=5mA) With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT C R1 B KRC281S~KRC286S EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.
93+_ 0.
20 B 1.
30+0.
20/-0.
15 A G H D 23 C 1.
30 MAX D 0.
40+0.
15/-0.
05 E 2.
40+0.
30/-0.
20 1 G 1.
90 H 0.
95 J 0.
13+0.
10/-0.
05 K 0.
00 ~ 0.
10 Q PP L 0.
55 M 0.
20 MIN N 1.
00+0.
20/-0.
10 C N K J P7 Q 0.
1 MAX M 1.
EMITTER 2.
BASE 3.
COLLECTOR E SOT-23 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range MARK SPEC TYPE KRC281S KRC282S KRC283S KRC284S KRC285S KRC286S hFE classification B MQB MRB MS...


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