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MRF166C

Tyco Electronics
Part Number MRF166C
Manufacturer Tyco Electronics
Description MOSFET BROADBAND RF POWER FETs
Published Jan 25, 2006
Detailed Description SEMICONDUCTOR TECHNICAL DATA Order this document by MRF166C/D The RF MOSFET Line RF Power Field Effect Transistors M...
Datasheet PDF File MRF166C PDF File

MRF166C
MRF166C

Overview
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF166C/D The RF MOSFET Line RF Power Field Effect Transistors MRF166C 20 W, 500 MHz MOSFET BROADBAND RF POWER FETs N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30 – 500 MHz.
• MRF166C — Guaranteed Performance at 500 MHz, 28 Vdc Output Power = 20 W Gain = 13.
5 dB Efficiency = 50% • Replacement for Industry Standards such as MRF136, DV2820, BLF244, SD1902, and ST1001 • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Facilitates Manual Gain Control, ALC and Modulation Techniques • Excellent Thermal Stability, Ideally Suited for Class A Operation • Low Crss — 4.
0 pF @ VDS = 28 V • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
D CASE 319–07, STYLE 3 G S MAXIMUM RATINGS Rating Drain–Gate Voltage Drain–Gate Voltage (RGS = 1.
0 MΩ) Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate Above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 ± 20 4.
0 70 0.
4 – 65 to 150 200 Unit Vdc Vdc Adc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 2.
5 Unit °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should be observed.
REV 10 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 V, ID = 5.
0 mA) Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0 V) Gate–Source Leakage Current (VGS = 20 V, VDS = 0 V) V(BR)DSS IDSS IGSS 65 — — — — — — 0.
5 1.
0 V mA µA ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 25 mA) Forward Transconductance (VDS = 10 V, ID = 1.
5 A) VGS(th) gfs 1.
5 0.
8 3.
0 1.
1 4.
5 — V mhos DYNAMIC CHARACTERIS...


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